A Novel Self Aligned Design Adapted Gate All Around (SADAGAA) MOSFET including two stacked Channels: A High Co-Integration Potential

R. Wacquez , R. Cerutti , P. Coronel , A. Cros , D. Fleury (1) , A. Null Pouydebasque , J. Bustos , S. Harrison , N. Loubet , S. Bborel , D. Lenoble , D. Delille (2) , F. Leverd , F. Judong (2) , M.-P. Samson , N. Vuillet , B. Guillaumot , T. Ernst (3) , P. Masson (4) , T. Skotnicki

1 INRETS/MA - Département Mécanismes d'Accidents
2 ST-CROLLES - STMicroelectronics [Crolles]
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 LEAT - Laboratoire d'Electronique, Antennes et Télécommunications

Domaines: Electromagnétisme

R. Wacquez, R. Cerutti, P. Coronel, A. Cros, D. Fleury, et al.. A Novel Self Aligned Design Adapted Gate All Around (SADAGAA) MOSFET including two stacked Channels: A High Co-Integration Potential. International Conference on Solid State Devices and Materials (SSDM), Sep 2006, Yokohama, Japan. pp.534-535. ⟨hal-00525089⟩