A 125GHz LC-VCO in a SiGe:C technology dedicated to mmW applications

Abstract : This paper presents a 125GHz LC-VCO dedicated to mmW applications. It has been designed, within the framework of the European project DOTFIVE, with a new B3T bipolar technology developed by STMicroelectronics, in which NPN transistors reach a ft and fmax of 260GHz and 340GHz respectively. Under a nominal power supply of 1.8V, the 125GHz VCO dissipates 54mA (with output buffers) for a measured phase noise of –75dBc/Hz at 1MHz offset from the 125GHz carrier and achieves a tuning range of 2GHz with a size of 0.25 mm2.
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Conference papers
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https://hal.archives-ouvertes.fr/hal-00512609
Contributor : Equipe Conception de Circuits <>
Submitted on : Tuesday, August 31, 2010 - 9:56:10 AM
Last modification on : Wednesday, October 9, 2019 - 9:30:27 PM

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  • HAL Id : hal-00512609, version 1

Citation

Romaric Toupe, Yann Deval, Jean-Baptiste Begueret. A 125GHz LC-VCO in a SiGe:C technology dedicated to mmW applications. IEEE Bipolar/ BiCMOS Circuits and Technology Meeting 2010, Oct 2010, United States. pp.50-51-52-53. ⟨hal-00512609⟩

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