Raman spectroscopy of chalcogenide thin films prepared by PLD

M. Erazu (1) , J. Rocca (1) , Marcelo Fontana (1) , Andrea Ureña (1) , Bibiana Arcondo (1) , Annie Pradel (2)

1 Laboratorio de Sólidos Amorfos [Buenos Aires]
2 ICGM ICMMM - Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier

Chalcogenide glasses have many technological applications as a result of their particular optical and electrical properties. Ge–Se and Ag–Ge–Se systems were recently studied and tested as new materials for building non-volatile memories. Following these ideas, thin films of Ge–Se and Ag–Ge–Se were deposited using pulsed laser deposition (PLD). Ag was sputtered over binary films (for a composition between 0.05 and 0.25 Ag atomic fraction) and photo-diffused afterwards. Thus, three kinds of samples were analyzed by means of Raman spectroscopy, in order to provide information on the short- and medium-range order: PLD binary films before Ag doping, after Ag doping and PLD ternary films. Before Ag doping, binary films exhibited Ge–Se corner-sharing tetrahedra modes at 190cm−1, low scattering from edge-sharing tetrahedra at 210cm−1, and Se chains at 260cm−1 (stretching mode). However, after the diffusion process was complete, we observed an intensity reduction of bands centered at 210cm−1 and 260cm−1. The spectra of the photo-diffused films were similar to those of films deposited using a ternary target. Relaxation effects in binary glasses were also analyzed. Results were compared with those of other authors.

Mots clés: Thin films; Raman spectroscopy

Domaines: Matériaux

M. Erazu, J. Rocca, Marcelo Fontana, Andrea Ureña, Bibiana Arcondo, et al.. Raman spectroscopy of chalcogenide thin films prepared by PLD. Journal of Alloys and Compounds, 2010, 495 (2), pp.642. ⟨10.1016/j.jallcom.2009.10.251⟩. ⟨hal-00494203⟩