Demonstration of a Low Threshold Current in 1.54 µm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks

Estelle Homeyer (1) , Rozenn Piron (1) , Frederic Grillot (1) , Olivier Dehaese (1) , Karine Tavernier (1) , Erwan Macé (1) , Jacky Even (1) , Alain Le Corre (1) , Slimane Loualiche (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON

This article reports the improvement of broad area lasers epitaxially grown on InP(311)B substrate. Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QDs) up to 10 11 cm-2 is obtained. The device, which contains only two stacks of QDs, exhibits a ground state laser emission at 1.54 µm at room temperature associated with a threshold current density as low as 170 A/cm2. Experimental results also demonstrate a modal gain greater than 8 cm-1 per QD plane.

Mots clés: Quantum dots; semiconductor laser; InP substrate

Domaines: Optique / photonique

Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Karine Tavernier, et al.. Demonstration of a Low Threshold Current in 1.54 µm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2007, 46 (10A), pp.6903-6905. ⟨10.1143/JJAP.46.6903⟩. ⟨hal-00493021⟩