Carrier relaxation dynamics in InAs/InP quantum dots

Patrice Miska (1) , Jacky Even (1) , Olivier Dehaese (1) , Xavier Marie (2)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse

The electronic properties of InAs/InP(113)B double-cap quantum dots (QDs) emitting around 1.55 μm are investigated. The carrier dynamics in QDs is studied by non-resonant timeresolved photoluminescence (tr-PL) experiments. This analysis reveals the QD electronic structure and the transient filling of the confined QD levels. Under low excitation densities, the spontaneous exciton lifetime is estimated and compared to previous time-resolved resonant and non-resonant experiments. Under high excitation density, a direct Auger recombination effect is identified. The temperature analysis enables us to distinguish Auger and phonon-assisted relaxation processes.

Domaines: Optique / photonique

Patrice Miska, Jacky Even, Olivier Dehaese, Xavier Marie. Carrier relaxation dynamics in InAs/InP quantum dots. Applied Physics Letters, 2008, 92, pp.191103. ⟨10.1063/1.2909536⟩. ⟨hal-00492425⟩