PHOTOCURENT SPECTROSCOPY OF InAs/GaInAsP(Q1.18) QUANTUM DOTS

Soline Richard (1) , Jean-Philippe Burin (1) , Charles Cornet (1) , Tony Rohel (1) , Abdulhadi Nakkar (1) , Françoise Thoumyre (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON

We present photocurrent measurements of InAs/InGaAsP (Q1.18) quantum dots embedded in a PIN diode grown on InP(311)B substrates. From the room temperature spectrum we deduce the fundamental E0 = 0.8eV and first excited E1 = 0.83eV energy levels of the dots. These energy levels are consistent with photoluminescence (PL) spectroscopy measurements E0=0.82eV. They are in good agreement with numerical simulations. Liquid nitrogen temperature measurements give E0=0.84eV and E1=0.895eV in agreement with PL measurements. Electroluminescence study correlates these results. Absorption coefficient was extracted from PC.

Domaines: Optique / photonique

Soline Richard, Jean-Philippe Burin, Charles Cornet, Tony Rohel, Abdulhadi Nakkar, et al.. PHOTOCURENT SPECTROSCOPY OF InAs/GaInAsP(Q1.18) QUANTUM DOTS. LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. ⟨hal-00490465⟩