Large Qxf Product for HBAR using Smart Cut (TM) transfer of LiNbO3 thin layers onto LiNbO3 substrate

M. Pijolat (1) , A. Reinhardt (1) , E. Defaÿ (1) , C. Deguet (1) , D. Mercier (1) , M. Aïd (1) , J.S. Moulet (2) , B. Ghyselen (2) , D. Gachon (3) , S. Ballandras (4)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 SOITEC
3 ENSMM - Ecole Nationale Supérieure de Mécanique et des Microtechniques
4 FEMTO-ST - Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174)

In this paper, we propose a novel approach for HBAR devices using the Smart Cut(TM) technology to obtain thin homogeneous X-cut single crystal films of LiNbO3. Sub-micron layers were successfully transferred onto LiNbO3 handle wafers. RF characterizations were performed around 1.95 GHz and quality factors in excess of 40 000 are extracted, proving the applicability of layer transfer by Smart Cut TM to acoustic devices. An excellent matching between simulations and experimental data as well as TCF measurements are presented in this paper

Mots clés: Smart Cut (TM); HBAR; X-cut; Lithium Niobate

Domaines: Electronique; Acoustique [physics.class-ph]

M. Pijolat, A. Reinhardt, E. Defaÿ, C. Deguet, D. Mercier, et al.. Large Qxf Product for HBAR using Smart Cut (TM) transfer of LiNbO3 thin layers onto LiNbO3 substrate. 2008 IEEE Ultrasonics Symposium, Nov 2008, Pékin, China. ⟨10.1109/ULTSYM.2008.0049⟩. ⟨hal-00486441⟩