High-gain and low-threshold InAs quantum-dot lasers on InP

Philippe Caroff (1) , Cyril Paranthoën (1) , Charly Platz (1) , Olivier Dehaese (1) , Hervé Folliot (1) , Nicolas Bertru (1) , Christophe Labbe (1) , Rozenn Piron (1) , Estelle Homeyer (1) , Alain Le Corre (1) , Slimane Loualiche (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON

InAs quantum-dot (QD) laser structures are grown on (113)B-oriented InP substrate by gas-source molecular-beam epitaxy. Following an optimized growth procedure, a high density of 1.1×1011 cm−2 of uniformly sized QDs is achieved. Broad-area lasers containing three stacked QD layers have been realized and tested. Laser emission on the ground-state transition (λ = 1.59 μm) is obtained at room temperature (RT), at a threshold current density as low as 190 A/cm2. Ground-state modal gain and transparency current density is measured to be 7 cm−1 and 23 A/cm2 per dot layer. Ground-state laser emission is also demonstrated from low temperature (100 K, Jth = 33 A/cm2) to high temperature (350 K), exhibiting an insensitive threshold in the [100, 170] K range, and a 55 K characteristic temperature at RT.

Domaines: Optique / photonique

Philippe Caroff, Cyril Paranthoën, Charly Platz, Olivier Dehaese, Hervé Folliot, et al.. High-gain and low-threshold InAs quantum-dot lasers on InP. Applied Physics Letters, 2005, 87, pp.243107. ⟨10.1063/1.2146063⟩. ⟨hal-00485764⟩