Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 μm - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes Année : 2009

Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 μm

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hal-00485726 , version 1 (21-05-2010)

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Georges Elias, Antoine Letoublon, Rozenn Piron, Ibrahim Alghoraibi, Abdulhadi Nakkar, et al.. Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 μm. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2009, 48 (7), pp.70204. ⟨10.1143/JJAP.48.070204⟩. ⟨hal-00485726⟩
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