Investigation of InN layers grown by molecular beam epitaxy on GaN templates

Arantxa Vilalta-Clemente (1) , G. R. Mutta (1) , Marie-Pierre Chauvat (1) , Magali Morales (1) , Jean-Louis Doualan (1) , Pierre Ruterana (1) , J. Grandal (2) , M.A. Sanchez-Garcia (2) , F. Calle (2) , E. Valcheva (3) , K. Kirilov (3)

1 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
2 ETSI Telecomunicacion - Departamento de Ingeniería Electrónica and ISOM
3 Faculty of Physics

An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X-ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility.

Mots clés: absorption; InN films; MBE; microstructure; photoluminescence

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Arantxa Vilalta-Clemente, G. R. Mutta, Marie-Pierre Chauvat, Magali Morales, Jean-Louis Doualan, et al.. Investigation of InN layers grown by molecular beam epitaxy on GaN templates. physica status solidi (a), 2010, 207 (5), pp.1079-1082. ⟨hal-00483614⟩