Doping of poly(3-hexylthiophene) nanofibers: microscopic morphology and electrical properties

S. Desbief (1) , G. Derue (1) , Ph. Leclère (1) , S. Lenfant (2) , D. Vuillaume (2) , R. Lazzaroni (1)

1 Laboratory for Chemistry for Novel Materials
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

The microstructure of thin deposits of poly(3-hexylthiophene) on silicon surfaces is investigated as a function of the solution concentration, the maturation time and the solvent nature, with the aim of generating one monolayer of P3HT nanofibers on the surface. These films are then exposed to a NOPF solution, in order to oxidize the conjugated system and to produce conducting nanostructures. The effect of the chemical doping on the microscopic morphology and the electrical properties is analyzed on the basis of AFM and I-V measurements.

Mots clés: Physical Sciences

S. Desbief, G. Derue, Ph. Leclère, S. Lenfant, D. Vuillaume, et al.. Doping of poly(3-hexylthiophene) nanofibers: microscopic morphology and electrical properties. European Physical Journal: Applied Physics, 2009, 46 (1), pp.1-5. ⟨10.1051/epjap/2009017⟩. ⟨hal-00480147⟩