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Communication Dans Un Congrès Année : 2009

Silicon substrate low-temperature-grown GaAs terahertz photomixers

Résumé

We have developed an epitaxial layer transfer technique for THz devices. Here we report the fabrication and the characterization of a THz photomixer on a silicon substrate. The active part of the photomixer is a low-temperature-grown GaAs mesa which has been transferred and layer bonded onto a Si substrate. The preliminary measurement of the THz signal generated in a photomixing configuration at 0.78 mum shows that the overall performance is comparable to standard GaAs substrate photomixers at frequencies up to 2 THz.
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Dates et versions

hal-00474428 , version 1 (20-04-2010)

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Alexandre Beck, Karine Blary, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, et al.. Silicon substrate low-temperature-grown GaAs terahertz photomixers. 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Sep 2009, Busan, South Korea. pp.1-2, ⟨10.1109/ICIMW.2009.5325684⟩. ⟨hal-00474428⟩
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