Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation

C. Ostermaier , G. Pozzovivo , J.F. Carlin , B. Basnar , W. Schrenk , Y. Douvry , Christophe Gaquière , J.C. Dejaeger (1) , K. Cico , K. Frohlich , M. Gonschorek , N. Grandjean , G. Strasser , D. Pogany , J. Kuzmik

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, et al.. Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation. IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩