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InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

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https://hal.archives-ouvertes.fr/hal-00473634
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Submitted on : Friday, April 16, 2010 - 8:41:22 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:24 PM

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M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, et al.. InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩

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