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InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess
M. Alomari
F Medjdoub
J.F. Carlin
E. Feltin
N. Grandjean
A. Chuvilin
U. Kaiser
Christophe Gaquière
1
E. Kohn
M. Alomari
Author
F Medjdoub
Author IdHAL : faridmedjdoub ORCID : https://orcid.org/0000-0002-4753-4718
J.F. Carlin
Author
E. Feltin
Author
N. Grandjean
Author
A. Chuvilin
Author
U. Kaiser
Author
Christophe Gaquière 1
Author IdHAL : christophe-gaquiere ORCID : https://orcid.org/0000-0003-3082-2489
E. Kohn
Author
1
IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 ([Univ. Lille, CNRS, Ecole Centrale Lille, Yncréa-ISEN, UVHC] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX - France)
- Centrale Lille (École Centrale de Lille - Cité Scientifique - CS 20048 59651 Villeneuve d'Ascq Cedex - France)
- Institut supérieur de l'électronique et du numérique (ISEN) (France)
- UVHC - Université de Valenciennes et du Hainaut-Cambrésis (Campus Mont Houy 59313 Valenciennes Cedex 9 - France)
- Université de Lille (Lille - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8520 (France)
- UPHF - Université Polytechnique Hauts-de-France (Campus Mont Houy 59313 Valenciennes Cedex 9 - France)
Document type :
Journal articles
Complete list of metadata
https://hal.archives-ouvertes.fr/hal-00473634
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Friday, April 16, 2010 - 8:41:22 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:24 PM
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Friday, April 16, 2010 - 8:41:22 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:24 PM
Identifiers
- HAL Id : hal-00473634, version 1
- DOI : 10.1109/LED.2009.2031659
Collections
IEMN | CNRS | UNIV-LILLE | UNIV-VALENCIENNES
Citation
M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, et al.. InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩
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