Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors

I. Saidi , M. Gassoumi , H. Maaref , H. Mejri , Christophe Gaquière (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Domaines: Sciences de l'ingénieur [physics]

I. Saidi, M. Gassoumi, H. Maaref, H. Mejri, Christophe Gaquière. Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors. Journal of Applied Physics, 2009, 106, pp.054511-1-7. ⟨10.1063/1.3202317⟩. ⟨hal-00473632⟩