2x2 InP optical switching matrix based on carrier-induced effects for 1.55-µm applications

Malek Zegaoui (1, 2) , Nargess Choueib (1, 2) , Joseph Harari (1, 2) , Didier Decoster (1, 2) , V. Magnin (1, 2) , X. Wallart (1) , Jean Chazelas (3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 OPTO - IEMN - Optoélectronique - IEMN
3 THALES [France]

This letter demonstrates a 2 × 2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP substrate. The matrix device comprises two digital optical switches (DOSs) with a wide multimode Y-junction associated with a sinusoidal passive integrated optical circuit with an optimized X-crossing. The passive structure was designed using a two-dimensional beam propagation method (BPM) and the entire InP-InGaAsP-InP DOS was designed using a semivectorial three-dimensional BPM. The fabricated 2 × 2 InP switching matrix heterostructure with λg = 1.3 μm exhibits optical crosstalk as low as -30.5 dB for drive current of 52 mA at 1.55-μm wavelength. Maximum crosstalk change of 4 dB is measured under optical polarization variation.

Mots clés: Adiabatic transitions; Carrier-induced effects; Digital optical switch (DOS); InP-InGaAsP-InP waveguides; Low crosstalk; Optical switching matrix

Domaines: Sciences de l'ingénieur [physics]

Malek Zegaoui, Nargess Choueib, Joseph Harari, Didier Decoster, V. Magnin, et al.. 2x2 InP optical switching matrix based on carrier-induced effects for 1.55-µm applications. IEEE Photonics Technology Letters, 2009, 21 (19), pp.1357-1359. ⟨10.1109/LPT.2009.2026484⟩. ⟨hal-00472780⟩