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Structural and optoelectronical characterization of Si-SiO2/SiO2 multilayers with applications in all Si tandem solar cells

Abstract : SiO2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (102 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under “dark” or “illumination” conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique.
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https://hal.archives-ouvertes.fr/hal-00469237
Contributor : Chantal Brassy <>
Submitted on : Thursday, April 1, 2010 - 12:15:08 PM
Last modification on : Friday, April 23, 2021 - 3:15:28 AM

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  • HAL Id : hal-00469237, version 1

Citation

D. Maestre, Olivier Palais, Damien Barakel, M. Pasquinelli, Claude Alfonso, et al.. Structural and optoelectronical characterization of Si-SiO2/SiO2 multilayers with applications in all Si tandem solar cells. Journal of Applied Physics, American Institute of Physics, 2010, 107, pp.064321. ⟨hal-00469237⟩

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