Resonant excitonic emission of a single quantum dot in the Rabi regime

R. Melet (1) , Valia Voliotis (1) , A. Enderlin (1) , Dimitri Rodichev (1) , X.L. Wang (2) , Thierry Guillet (3) , R. Grousson (1)

1 INSP - Institut des Nanosciences de Paris
2 Natl Inst Adv Ind Sci & Technol
3 GES - Groupe d'étude des semiconducteurs

We report on coherent resonant emission of the fundamental exciton state in a single semiconductor GaAs quantum dot. A resonant regime with picosecond laser excitation is realized by embedding the quantum dots in a one-dimensional waveguiding structure. As the pulse intensity is increased, Rabi oscillation is observed up to three periods. The Rabi regime is achieved owing to an enhanced light-matter coupling in the waveguide but with different dynamics with respect to usual cavity quantum electrodynamics. The resonant control of the quantum dot fundamental transition opens new possibilities in quantum state manipulation and quantum optics experiments in condensed-matter physics.

Mots clés: SELF-INDUCED TRANSPARENCY; WIRE; SEMICONDUCTOR; SPECTROSCOPY; WELLS

R. Melet, Valia Voliotis, A. Enderlin, Dimitri Rodichev, X.L. Wang, et al.. Resonant excitonic emission of a single quantum dot in the Rabi regime. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.073301. ⟨10.1103/PhysRevB.78.073301⟩. ⟨hal-00450840⟩