A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET

Sebastien Fregonese (1) , Cristell Maneux (1) , Thomas Zimmer (1)

1 IMS - Laboratoire de l'intégration, du matériau au système

This paper presents a versatile compact model dedicated to ballistic 1D transistors that are fabricated in very advanced technologies, in order to predict the ultimate performances of novel nano-device-based circuits. The results presented here after are related to MOS like CNTFET and GNRFET thanks to a unified expression of the non parabolic energy dispersion relation NPEDR which enhances other tentative works [1] limited to the parabolic case and to Boltzmann approximation. To warrant the accuracy as well as the flexibility of this compact model for ballistic 1D transistor, we have developed a thermionic charge model based on NPEDR. The NPEDR expression [2] is universal to describe small Si-Nanowire, CNT and GNR materials: (E − sbbd[p])(1+α[p](E − sbbd[p])) = h2k2 ÷ 2m∗[p]

Domaines: Micro et nanotechnologies/Microélectronique

Sebastien Fregonese, Cristell Maneux, Thomas Zimmer. A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET. Semiconductor Device Research Symposium, 2009. ISDRS '09. International, Dec 2009, United States. pp.1 - 2, ISBN: 978-1-4244-6030-4, ⟨10.1109/ISDRS.2009.5378241⟩. ⟨hal-00450128⟩