STiGer cryoetching process of silicon: passivation mechanisms, enhanced robustness and performances

Jeremy Pereira (1) , Hao Jiang (1) , Laurianne E. Pichon (1) , Remi Dussart (1) , Corinne Y. Duluard (1) , Philippe Lefaucheux (1) , Mohamed Boufnichel (2) , Christophe Cardinaud (3) , Pierre Ranson (1)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 ST-CROLLES - STMicroelectronics [Crolles]
3 IMN - Institut des Matériaux Jean Rouxel

Domaines: Physique des plasmas [physics.plasm-ph]

Jeremy Pereira, Hao Jiang, Laurianne E. Pichon, Remi Dussart, Corinne Y. Duluard, et al.. STiGer cryoetching process of silicon: passivation mechanisms, enhanced robustness and performances. Plasma Etch and Strip in Microelectronics 2nd International Workshop, Feb 2009, Louvain, Belgium. ⟨hal-00444370⟩