Enhanced robustness of the cryogenic process for silicon deep etching

Remi Dussart (1) , Thomas Tillocher (1) , El-Houcine Oubensaid (1) , Philippe Lefaucheux (1) , Pierre Ranson (1) , Xavier Mellhaoui (1) , Mohamed Boufnichel (2) , Lawrence J. Overzet (3) , Laurianne E. Pichon (1) , Corinne Y. Duluard (1)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 ST-CROLLES - STMicroelectronics [Crolles]
3 PAL - Plasma Application Laboratory

Domaines: Physique des plasmas [physics.plasm-ph]

Remi Dussart, Thomas Tillocher, El-Houcine Oubensaid, Philippe Lefaucheux, Pierre Ranson, et al.. Enhanced robustness of the cryogenic process for silicon deep etching. Micro- and Nano-Engineering, Sep 2007, Copenhague, Denmark. ⟨hal-00444248⟩