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Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption

Abstract : The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing doping or temperature. Using a novel computational scheme, we relate this effect to the role and occupancy of the a1g orbitals. This finding unveils the inequivalence of different routes across the Mott transition in V2O3
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https://hal.archives-ouvertes.fr/hal-00443878
Contributor : Jean-Pascal Rueff Connect in order to contact the contributor
Submitted on : Monday, January 4, 2010 - 7:01:09 PM
Last modification on : Tuesday, November 16, 2021 - 4:38:53 AM
Long-term archiving on: : Friday, June 18, 2010 - 12:17:59 AM

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  • HAL Id : hal-00443878, version 1
  • ARXIV : 1001.0477

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F. Rodolakis, P. Hansmann, J.-P. Rueff, A. Toschi, M.W. Haverkort, et al.. Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption. Physical Review Letters, American Physical Society, 2010, 104, pp.047401. ⟨hal-00443878⟩

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