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Article Dans Une Revue Journal of Nanoscience and Nanotechnology Année : 2010

Temperature Dependent Emission Quenching for Silicon Nanoclusters

Résumé

Silicon reach-silicon-oxide (SRSO) film containing silicon nanoclusters was obtained by the reactive magnetron sputtering. Photoluminescence (PL) spectra were measured as a function of temperature at different excitation wavelengths and additionally at different excitation power densities. Obtained PL spectra characterize by two emission bands centered at 1.6 and 2.4 eV. For these bands, temperature behaviour of PL intensities strongly differs but clearly correlate each other. Moreover, it has been observed that obtained PL intensities versus temperature exhibit a strong dependence on the excitation power density in the low temperature range.
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Dates et versions

hal-00440831 , version 1 (11-12-2009)

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  • HAL Id : hal-00440831 , version 1

Citer

A. Podhorodecki, G. Zatryb, J. Misiewicz, Fabrice Gourbilleau, Christian Dufour. Temperature Dependent Emission Quenching for Silicon Nanoclusters. Journal of Nanoscience and Nanotechnology, 2010, 10, pp.1-5. ⟨hal-00440831⟩
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