Structural analysis and transistor properties of hetero-molecular bilayers

N. Hiroshiba , R. Hayakawa , Matthieu Petit (1) , T. Chikyow , K. Matsuishi , Y. Wakayama

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

We examined the film morphologies and transistor properties of hetero-molecular bilayer consisting of N, N’- dioctyl-3, 4, 9, 10-perylenedicarboximide (PTCDI-C 8 ) and quaterrylene. First, the structure and carrier conduction of PTCDI-C 8 films were studied, followed by an analysis of the carrier accumulation process in a PTCDI-C 8 /quaterrylene hetero-bilayer transistor. Based on the displacement current measurement (DCM), we stress the potential of the hetero-bilayer for tuning carrier accumulation like carrier doping techniques in field-effect transistors.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Electronique

N. Hiroshiba, R. Hayakawa, Matthieu Petit, T. Chikyow, K. Matsuishi, et al.. Structural analysis and transistor properties of hetero-molecular bilayers. Thin Solid Films, 2009, 518 (2), pp.441-443. ⟨10.1016/j.tsf.2009.07.050⟩. ⟨hal-00440707⟩