Effect of holes on the dynamic polarization of nuclei in semiconductors
Résumé
In semiconductors optically enhanced polarization of nuclei is known to be primarily due to photoexcited electrons. We show that holes play a role in this process via the spin-dependent recombination of the carriers. Our results are obtained in n-type InP where spin-dependent recombination leads to the inversion of the nuclear field direction due to the donor spins cooling under optical excitation.