Synthesis and characterization of cubic silicon carbide (ß-SiC) and trigonal silicon nitride (a-Si3N4) nanowires

K. Saulig-Wenger , Mikhael Bechelany , D. Cornu , Serge Bernard , F. Chassagneux , P. Miele , Thierry Epicier (1)

1 MATEIS - Matériaux, ingénierie et science [Villeurbanne]

By varying the final heating temperature in the range 1050°C - 1300°C, cubic silicon carbide (ß-SiC) and/or trigonal silicon nitride (a-Si3N4) nanowires (NWs) were prepared by direct thermal treatment under nitrogen, of commercial silicon powder and graphite. Long and highly curved ß-SiC NWs were preferentially grown below 1200°C, while straight and short a-Si3N4 NWs were formed above 1300°C. Between these two temperatures, a mixture of both nanowires was obtained. The structure and chemical composition of these nanostructures have been investigated by SEM, HRTEM, EDX and EELS

Domaines: Matériaux

K. Saulig-Wenger, Mikhael Bechelany, D. Cornu, Serge Bernard, F. Chassagneux, et al.. Synthesis and characterization of cubic silicon carbide (ß-SiC) and trigonal silicon nitride (a-Si3N4) nanowires. Ceramic Engineering and Science Proceedings, 2005, pp.341-348. ⟨hal-00436832⟩