Characterisation of nanocavities in He+-implanted silicon by transmission electron microscopy and small-angle X-ray scattering.

M. Dumont (1) , V. Coulet (1) , F. Bley (2) , G. Regula (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 SIMaP - Science et Ingénierie des Matériaux et Procédés

Nanocavities created in silicon using high energy He+ implantation are studied using the combination of transmission electron microscopy experiments and small-angle X-ray scattering measurements. The complementarity of the two techniques is presented and using the results from both techniques, a complete characterisation of nanocavities can be drawn in terms of location of the implanted region, morphology. mean size and volume fraction as well as the cavity size distribution. (C) 2009 Elsevier B.V. All rights reserved.

Mots clés: Ion implantation; Silicon; Electron microscopy; SAXS; helium desorption; cavities; bubbles; voids; si.; si

Domaines: Matériaux; Matériaux

M. Dumont, V. Coulet, F. Bley, G. Regula. Characterisation of nanocavities in He+-implanted silicon by transmission electron microscopy and small-angle X-ray scattering.. Materials Science and Engineering: B, 2009, 162 (2), pp.135-142. ⟨10.1016/j.mseb.2009.03.019⟩. ⟨hal-00436690⟩