Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Abstract : Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
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Article dans une revue
Journal of Infrared, Millimeter and Terahertz Waves, Springer Verlag, 2009, 30 (12), pp.1319-1337. <10.1007/s10762-009-9564-9>


https://hal.archives-ouvertes.fr/hal-00430452
Contributeur : Logiciel Aigle <>
Soumis le : vendredi 6 novembre 2009 - 18:53:04
Dernière modification le : mercredi 27 juillet 2016 - 14:48:48

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W. Knap, Michel Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, et al.. Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications. Journal of Infrared, Millimeter and Terahertz Waves, Springer Verlag, 2009, 30 (12), pp.1319-1337. <10.1007/s10762-009-9564-9>. <hal-00430452>

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