Variable temperature characterization of N,N'-Bis(n-penty)terylene-3,4:11,12-tetracarboxylic diimide thin film transistor

Matthieu Petit (1) , R. Hayakawa , T. Chikyow , J.P. Hill , K. Ariga , Y. Wakayama

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

Organic thin film transistors (OTFT) based on N,N 0 -Bis(n-pentyl)terrylene-3,4:11,12-tetra- carboxylic diimide (TTCDI-5C) with Al or Au top-contact electrodes were deposited on SiO 2 (200 nm)/p-Si (0 0 1) substrates. Carrier mobility was examined as a function of tem- perature in the range from 50 to 310 K. Two distinct carrier transfer behaviours were observed: temperature independent behaviour below 150 K and thermally activated behaviour above 150 K. Activation energies presented values of 85–130 meV depending on the metal electrodes (Au, Al), which can be attributed to the carrier traps at the interface and the energy-level offset between the lowest unoccupied molecular orbital (LUMO) and the work functions of the respective metals.

Domaines: Matériaux; Science des matériaux [cond-mat.mtrl-sci]; Electronique

Matthieu Petit, R. Hayakawa, T. Chikyow, J.P. Hill, K. Ariga, et al.. Variable temperature characterization of N,N'-Bis(n-penty)terylene-3,4:11,12-tetracarboxylic diimide thin film transistor. Organic Electronics, 2009, 10 (6), pp.1187-1190. ⟨10.1016/j.orgel.2009.05.026⟩. ⟨hal-00419669⟩