Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging

Etienne Pernot (1) , I. El Harrouni (2) , Michel Mermoux (3) , Jean-Marie Bluet (2) , Mikhail Anikin (1) , Didier Chaussende (4) , Michel Pons (5) , Roland Madar (1)

1 LMGP - Laboratoire des matériaux et du génie physique
2 LPM - Laboratoire de physique de la matière
3 LEPMI - Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces
4 NOVASiC
5 LTPCM - Laboratoire de thermodynamique et physico-chimie métallurgiques

Reflection synchrotron topography, integrated photoluminescence imaging and Raman spectroscopy imaging have been performed on a 4H-SiC slice. The three methods give complementary information on the defects in the crystal. The differences between the observations are discussed.

Mots clés: Synchrotron topography; scanning photoluminescence; Raman spectroscopy

Domaines: Matériaux

Etienne Pernot, I. El Harrouni, Michel Mermoux, Jean-Marie Bluet, Mikhail Anikin, et al.. Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging. Materials Science Forum, 2003, 433-436, pp. 265-268. ⟨10.4028/www.scientific.net/MSF.433-436.265⟩. ⟨hal-00418043⟩