Characterization of ‹111› diamond thin films by micro-Raman spectroscopy

Michel Mermoux (1) , Antonella Tajani (2) , Bernadette Marcus (1) , Etienne Bustarret (2) , Etienne Gheeraert (2) , M. Nesladek (3) , S. Koizumi (4)

1 LEPMI - Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces
2 LEPES - Laboratoire d'Etudes des Propriétés Electroniques des Solides
3 IMOMEC - Institute for Materials Research
4 Advanced Materials Laboratory

High-resolution confocal micro-Raman spectra show that for homoepitaxial growth on ‹111›-oriented surfaces the zone-center phonon peak of the epilayers may occur a few cm^-1 below the peak of the relaxed diamond. This indicates a strong tensile strain in the films, while close to the interface the substrate is under compression. This effect was observed in both phosphorus-doped and undoped epilayers, as well as on some facets of a polycrystalline sample. Results obtained on ‹111›-oriented films grown by microwave plasma chemical vapor deposition in three different laboratories are compared, providing some hints as to how such undesirable strain effects can be avoided.

Mots clés: Homoepitaxy of diamond films; Strain; Raman spectroscopy; Vibrational properties characterization

Domaines: Matériaux

Michel Mermoux, Antonella Tajani, Bernadette Marcus, Etienne Bustarret, Etienne Gheeraert, et al.. Characterization of ‹111› diamond thin films by micro-Raman spectroscopy. Diamond and Related Materials, 2004, 13 (4-8), pp. 886-890. ⟨10.1016/j.diamond.2003.12.002⟩. ⟨hal-00417861⟩