MOVPE growth of InGaN on ZnO-buffered Si(111) substrates for solar cells applications

T. Moudakir 1 S. Gautier 2 G. Orsal 2 N. Maloufi 3 D. J. Rogers 4 F. Hosseini Teherani 4 F. Jomard 5 M. Abid 1 Nicolas Fressengeas 2 A. Ougazzaden 1
1 UMI2958 - Georgia Tech - CNRS [Metz]
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
3 LETAM - Laboratoire d'étude des textures et application aux matériaux
4 Nanovation - Nanovation SARL
5 GEMAC - Groupe d'Etude de la Matière Condensée
Document type :
Conference papers
Complete list of metadatas
https://hal.archives-ouvertes.fr/hal-00415609
Contributor : Nicolas Fressengeas <>
Submitted on : Thursday, September 10, 2009 - 5:04:49 PM
Last modification on : Friday, January 10, 2020 - 3:42:18 PM

Identifiers

  • HAL Id : hal-00415609, version 1

Collections

CNRS | UNIV-FCOMTE | SUPELEC | UVSQ | GEMAC | UMI-GTL | UNIV-LORRAINE

Citation

T. Moudakir, S. Gautier, G. Orsal, N. Maloufi, D. J. Rogers, et al.. MOVPE growth of InGaN on ZnO-buffered Si(111) substrates for solar cells applications. EW-MOVPE XIII Conference, Jun 2009, Ulm, Germany. pp.249. ⟨hal-00415609⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

240

Contact

Informations

CCSD