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Multiscale simulation of carbon nanotube devices

Abstract : In recent years, the understanding and accurate simulation of carbon nanotube-based devices has become very challenging. Conventional simulation tools of microelectronics are necessary to envisage the performance and use of nanotube transistors and circuits, but the models need to be refined to properly describe the full complexity of such novel type of devices at the nanoscale. Indeed, many issues such as contact resistance, low dimensional electrostatics and screening effects, as well as nanotube doping or functionalization, demand for more accurate quantum approaches. In this article, we review our recent progress on multiscale simulations which aim at bridging first principles calculations with compact modelling, including the comparison between semiclassical Monte Carlo and quantum transport approaches.
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Submitted on : Tuesday, June 30, 2009 - 9:41:22 AM
Last modification on : Tuesday, October 19, 2021 - 10:50:37 PM



Christophe Adessi, R. Avriller, A. Bournel, Xavier Blase, H. Cazin d'Honincthun, et al.. Multiscale simulation of carbon nanotube devices. Comptes Rendus Physique, Centre Mersenne, 2009, 10 (4), pp.305-319. ⟨10.1016/j.crhy.2009.05.004⟩. ⟨hal-00400169⟩



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