Evaluation of Recent Technologies of Non-Volatile RAM

Abstract : Two types of recent non-volatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
Type de document :
Communication dans un congrès
9th European Conference on Radiation and its Effects on Components and Systems (RADECS), Sep 2007, Deauville, France. pp.1-8, 2007
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https://hal.archives-ouvertes.fr/hal-00397841
Contributeur : Frédéric Darracq <>
Soumis le : mardi 23 juin 2009 - 14:06:42
Dernière modification le : mercredi 24 octobre 2018 - 10:23:04

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  • HAL Id : hal-00397841, version 1

Citation

T. Nuns, S. Duzellier, J. Bertrand, G. Hubert, Vincent Pouget, et al.. Evaluation of Recent Technologies of Non-Volatile RAM. 9th European Conference on Radiation and its Effects on Components and Systems (RADECS), Sep 2007, Deauville, France. pp.1-8, 2007. 〈hal-00397841〉

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