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Conference papers

Evaluation of Recent Technologies of Non-Volatile RAM

Abstract : Two types of recent non-volatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
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Conference papers
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Contributor : Frédéric Darracq <>
Submitted on : Tuesday, June 23, 2009 - 2:06:42 PM
Last modification on : Tuesday, March 16, 2021 - 3:44:16 PM


  • HAL Id : hal-00397841, version 1


T. Nuns, S. Duzellier, J. Bertrand, G. Hubert, Vincent Pouget, et al.. Evaluation of Recent Technologies of Non-Volatile RAM. 9th European Conference on Radiation and its Effects on Components and Systems (RADECS), Sep 2007, Deauville, France. pp.1-8. ⟨hal-00397841⟩



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