Radiation Hardened by Design RF Circuits Implemented in 0.13µm CMOS Technology

Abstract : Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 mum CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO2). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ
Type de document :
Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2006, 53 (6), pp.3449-3454. 〈10.1109/TNS.2006.885009〉
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https://hal.archives-ouvertes.fr/hal-00397725
Contributeur : Frédéric Darracq <>
Soumis le : mardi 23 juin 2009 - 10:03:56
Dernière modification le : jeudi 4 octobre 2018 - 11:14:07

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W. Chen, Vincent Pouget, G.K. Gentry, H. J. Barnaby, B. Vermeire, et al.. Radiation Hardened by Design RF Circuits Implemented in 0.13µm CMOS Technology. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2006, 53 (6), pp.3449-3454. 〈10.1109/TNS.2006.885009〉. 〈hal-00397725〉

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