Selective growth of GaN nanostructures on SIC by MOVPE and their strain relaxation study by submicron beam x-ray diffraction

W. H. Goh , P. L. Bonanno , J. Martin (1) , S. Gautier (1) , N. Maloufi (1) , A.A. Sirenko , A. Kazimirov (2) , Z.-H. Cai , A. Martinez , A. Ramdane (1) , L.L. Gratiet , G. Patriarche , M. B. Assouar (3) , T. Moudakir (1) , A. Ougazzaden (4)

1 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
2 Cornell University [New York]
3 LPMIA - Laboratoire de physique des milieux ionisés et applications
4 UMI GT CNRS

Domaines: Optique [physics.optics]

W. H. Goh, P. L. Bonanno, J. Martin, S. Gautier, N. Maloufi, et al.. Selective growth of GaN nanostructures on SIC by MOVPE and their strain relaxation study by submicron beam x-ray diffraction. EW MOVPE 2009, Jun 2009, Ulm, Germany. pp.1-1. ⟨hal-00397607⟩