Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

Sombel Diaham (1) , Marie-Laure Locatelli (1) , Thierry Lebey (1) , Christophe Raynaud (2) , Mihai Lazar (2) , Heu Vang (2) , Dominique Planson (2)

1 LAPLACE-MDCE - Matériaux Diélectriques dans la Conversion d’Energie
2 AMPERE - Ampère

A polyimide (PI) has been used for the passivation of maximum 7.8 kV 4H-SiC P+N–N+ (PiN) diodes with a 60 μm-thick base epilayer and a junction termination extension (JTE) periphery protection. The dielectric strength of PI films is studied versus area and temperature. The reverse electrical characterization of the PI–passivated PiN diodes is presented for different natures of the environmental atmosphere. The results are compared to those obtained from same devices passivated with a deposited SiO2 thick film. The highest experimental breakdown voltages are obtained for PI–passivated PiN diodes immersed in PFPE oil, with a 5-6 kV typical value, and a 7.3 kV maximum value. Experimental observations are discussed in correlation with the insulating film properties.

Mots clés: polyimide; JTE; 4H-SiC; PiN diodes; passivation; breakdown voltage; environmental atmosphere; polyimide

Domaines: Energie électrique

Sombel Diaham, Marie-Laure Locatelli, Thierry Lebey, Christophe Raynaud, Mihai Lazar, et al.. Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage. CSCRM, Sep 2008, Barcelone, Spain. pp.695-698, ⟨10.4028/www.scientific.net/MSF.615-617.695⟩. ⟨hal-00391472⟩