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Communication Dans Un Congrès Année : 2009

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

J. Eid
  • Fonction : Auteur
I.-G. Galben
  • Fonction : Auteur
G. Zoulis
  • Fonction : Auteur
Teddy Robert
  • Fonction : Auteur
  • PersonId : 860822
D. Chaussende
Sandrine Juillaguet
  • Fonction : Auteur
  • PersonId : 839245
Antoine Tiberj
Jean Camassel
  • Fonction : Auteur
  • PersonId : 839246

Résumé

We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the Structural defects. like stacking faults and dislocations. The effect of changing the nitrogen flow rate oil the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques.
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Dates et versions

hal-00390466 , version 1 (02-06-2009)

Identifiants

  • HAL Id : hal-00390466 , version 1

Citer

J. Eid, I.-G. Galben, G. Zoulis, Teddy Robert, D. Chaussende, et al.. Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48. ⟨hal-00390466⟩
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