Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si.

P. Corfdir (1) , J. Ristic (1) , Pierre Lefebvre (1, 2) , E. Calleja (3) , Jean-Daniel Ganière (1) , Benoit Deveaud-Plédran (1)

1 Institut de Photonique et d'Electronique Quantiques
2 GES - Groupe d'étude des semiconducteurs
3 Departamento de Ingeniería Electrónica and ISOM

Domaines: Autre [cond-mat.other]

P. Corfdir, J. Ristic, Pierre Lefebvre, E. Calleja, Jean-Daniel Ganière, et al.. Time-resolved photoluminescence of GaN nanocolumns grown by molecular beam epitaxy on Si.. International Workshop on Nitride Semiconductors – IWN08, Oct 2008, Montreux, Switzerland. ⟨hal-00390010⟩