Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC

M. Zielinski , M. Portail , T. Chassagne , Sandrine Juillaguet (1) , Herve Peyre (1) , A. Leycuras , Jean Camassel (1)

1 GES - Groupe d'étude des semiconducteurs

We report on recent advances in liquid phase epitaxial (LPE) conversion of a bulk Si wafer into self standing 3C-SiC. This includes the role of the stress control within the (100) oriented "crucibles", the elaboration of crack-free (111) "crucibles" and the successful conversion of (100) and (111) oriented Si wafer. To date up to 100 mu m thick 3C-SiC(100) as well as 30 mu m thick crack-free 3C-SiC (111) materials have been obtained. The growth rate ranges from 20 to 100 mu m/h and locally can even reach similar to 1mm/h. In this work we focus on the structural, morphological and optical properties of the LPE-grown material.

Mots clés: 3C-SiC; Liquid Phase Epitaxy; bulk Si wafer conversion; EPITAXIAL-GROWTH; FILMS

Domaines: Science des matériaux [cond-mat.mtrl-sci]

M. Zielinski, M. Portail, T. Chassagne, Sandrine Juillaguet, Herve Peyre, et al.. Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.49-52. ⟨hal-00389376⟩