Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µm

N. Sfina , J.-L. Lazzari (1) , Y. Cuminal (2, 3) , Philippe Christol (2, 4) , M. Said

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
2 IES - Institut d’Electronique et des Systèmes
3 M@CSEE - Micro électronique, Composants, Systèmes, Efficacité Energétique
4 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

Domaines: Optique / photonique

N. Sfina, J.-L. Lazzari, Y. Cuminal, Philippe Christol, M. Said. Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µm. Thin Solid Films, 2008, 517 (1), pp.388-390. ⟨10.1016/j.tsf.2008.08.038⟩. ⟨hal-00386891⟩