Evaluation of a negative 193 nm DUV resist for the 45 nm node: Lithography, degradation kinetics during etch and implant

M. J. May (1) , Samir Derrough , Arnaud Bazin , Bénédicte Mortini (2) , Cyril Brochon (3) , Georges Hadziioannou (3)

1 UGENT - Universiteit Gent = Ghent University
2 ST-CROLLES - STMicroelectronics [Crolles]
3 Laboratoire d'Ingenierie des Polymères pour les Hautes Technologies

A 193 nm negative tone resist has been studied in order to estimate its possible use for the 45 nm node. Therefore, its etch resistance versus a 193 nm positive tone model resist has been analysed and its resolution limit determined by 193 nm interferometric immersion lithography. More recently, due to the chemical composition of the negative tone resist, it has been of interest to use it for thin film implant and some preliminary results will be given.

Mots clés: EXCIMER-LASER LITHOGRAPHY; ALICYCLIC POLYMERS; PHOTORESISTS

Domaines: Polymères

M. J. May, Samir Derrough, Arnaud Bazin, Bénédicte Mortini, Cyril Brochon, et al.. Evaluation of a negative 193 nm DUV resist for the 45 nm node: Lithography, degradation kinetics during etch and implant. Journal of Photopolymer Science and Technology, 2007, 20 (3), pp.345-352. ⟨hal-00383667⟩