Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters
Résumé
Sic is compared on a physical basis to Si. Sic devices offer lower On-resistance and operating temperatures over 300°C. It is shown that inverters using normally-On power switches do not differ from inverters based on normally-Off devices when the gate driver is taken into account. Basic building blocs of a Gate driver are proposed using solely SiC Normally-On JFETs. Principal issues with Sic JFET power converters are listed.