Electronic, optical and transport properties of semiconductor nanowires : theory and simulations

Yann-Michel Niquet (1) , Aurélien Lherbier , Martin P. Persson (1) , François Triozon (2) , Stéphane Roche (1) , Mamadou Diarra (3) , Christophe Delerue (3) , Guy Allan (3)

1 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures
2 Lithography Laboratory
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting the context of nanodevice simulation, the focus will be made on the limits for ballistic transport in these several types of nanodevices.

Mots clés: charge transport; transistor simulation; Monte Carlo; tight-binding; non equilibrium green functions; Kubo approach; Landauer-Büttiker method

Domaines: Sciences de l'ingénieur [physics]

Yann-Michel Niquet, Aurélien Lherbier, Martin P. Persson, François Triozon, Stéphane Roche, et al.. Electronic, optical and transport properties of semiconductor nanowires : theory and simulations. 397th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires : Physics, Materials and Devices, 2007, Bad Honnef, Germany. ⟨hal-00367404⟩