HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Conference papers

Selective wet chemical etching of GaInSb and AlInSb for 6.25 Å HBT fabrication

E. Mairiaux L. Desplanque X. Wallart Gilles Dambrine M. Zaknoune 1
1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
Document type :
Conference papers
Complete list of metadata
https://hal.archives-ouvertes.fr/hal-00360403
Contributor : Collection Iemn Connect in order to contact the contributor
Submitted on : Wednesday, February 11, 2009 - 10:37:45 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:22 PM

Identifiers

Collections

IEMN | CNRS | UNIV-LILLE | UNIV-VALENCIENNES

Citation

E. Mairiaux, L. Desplanque, X. Wallart, Gilles Dambrine, M. Zaknoune. Selective wet chemical etching of GaInSb and AlInSb for 6.25 Å HBT fabrication. IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4702971⟩. ⟨hal-00360403⟩

Export

BibTeX TEI DC DCterms EndNote Datacite

Share

Metrics

Record views

29