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Conference papers

Characterization of silicon nitride thin films used as stressor liners on CMOS FETs

G. Raymond Pascal Morin Arnaud Devos 1 D.A. Hess M. Braccini F. Volpi
1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
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Conference papers
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https://hal.archives-ouvertes.fr/hal-00360388
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Submitted on : Wednesday, February 11, 2009 - 10:21:47 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:22 PM

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IEMN | CNRS | UNIV-LILLE | UNIV-VALENCIENNES

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G. Raymond, Pascal Morin, Arnaud Devos, D.A. Hess, M. Braccini, et al.. Characterization of silicon nitride thin films used as stressor liners on CMOS FETs. 9th International Conference on Ultimate Integration of Silicon, ULIS 2008, 2008, Italy. pp.199-202, ⟨10.1109/ULIS.2008.4527173⟩. ⟨hal-00360388⟩

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