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Conference papers

Characterization of silicon nitride thin films used as stressor liners on CMOS FETs

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https://hal.archives-ouvertes.fr/hal-00360388
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Submitted on : Wednesday, February 11, 2009 - 10:21:47 AM
Last modification on : Wednesday, March 23, 2022 - 3:50:22 PM

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G. Raymond, Pascal Morin, Arnaud Devos, D.A. Hess, M. Braccini, et al.. Characterization of silicon nitride thin films used as stressor liners on CMOS FETs. 9th International Conference on Ultimate Integration of Silicon, ULIS 2008, 2008, Italy. pp.199-202, ⟨10.1109/ULIS.2008.4527173⟩. ⟨hal-00360388⟩

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