Side-gated transport in focused-ion-beam-fabricated multilayered graphene nanoribbons

J.F. Dayen (1) , A. Mahmood (1) , D.S. Golubev (2, 3) , I. Roch-Jeune (4) , P. Salles (1) , Erik Dujardin (1)

1 CEMES - Centre d'élaboration de matériaux et d'études structurales
2 KIT - Karlsruher Institut für Technologie
3 LPI RAS - P. N. Lebedev Physical Institute of the Russian Academy of Sciences [Moscow]
4 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

A resist-less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer-scale planar device in ultrathin graphitic disks is demonstrated by producing 50-nm-wide double side-gated transistor devices (see image). Experiments and theory suggest that the behavior of the nanoribbons can be interpreted as a Coulomb blockade in a linear array of tunnel junctions between graphene islands.

Domaines: Micro et nanotechnologies/Microélectronique

J.F. Dayen, A. Mahmood, D.S. Golubev, I. Roch-Jeune, P. Salles, et al.. Side-gated transport in focused-ion-beam-fabricated multilayered graphene nanoribbons. Small, 2008, 4 (6), pp.716-720. ⟨10.1002/smll.200700913⟩. ⟨hal-00360027⟩