Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates

Abdelkader Aissat (1, 2) , Said Nacer (2) , Messaoud Bensebti (2) , Jean-Pierre Vilcot (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LASICOM Laboratory

In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase the emission wavelength. The reduction of energy is due to the interaction of the energy of the conduction band with the level of nitrogen and more the concentration of nitrogen increases, more the energy of the band gap decreases. On the other hand, the emission wavelength increases, the advantage of the incorporation of nitrogen in such structures is to vary the wavelength between 0.980 and 1.3 μm while exploiting of course the composition of gallium, composition of nitrogen and the thickness of the quantum well. Less temperature insensitive devices are so intended to be fabricated

Mots clés: Lasers diode; Strained quantum wells; GaInNAs; GaInNAsSb/GaAs; Optoelectronics; Semiconductor

Domaines: Sciences de l'ingénieur [physics]

Abdelkader Aissat, Said Nacer, Messaoud Bensebti, Jean-Pierre Vilcot. Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates. Microelectronics Journal, 2008, 39, pp.63-66. ⟨10.1016/j.mejo.2007.10.014⟩. ⟨hal-00357304⟩