GaNAsSb material for ultrafast microwave photoconductive switching application

Kian Hua Tan (1) , Sonn Fatt Yoon (1) , Charlotte Tripon-Canseliet (2) , Wan Khai Loke (1) , Satrio Wicaksono (1) , Salim Faci (2) , Naïma Saadsaoud (3) , Jean-Francois Lampin (4) , Didier Decoster (3) , Jean Chazelas (4)

1 EEE - School of Electrical and Electronic Engineering
2 L2E - Laboratoire d'Electronique et Electromagnétisme
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 THALES Airborne Systems [Elancourt]

We report a photoconductive switch with GaNAsSb as active material for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source and a valved antimony cracker source. The 0.5 μm thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb. The switch exhibits pulsed response with full width at half maximum of 30 ps and photoresponse of up to 1.6 μm. In microwave switching application, the switch shows ON/OFF ratio of 11 dB at 1 GHz and response up to 15 GHz.

Mots clés: photoconducting switches; nitrogen compounds; arsenic compounds; gallium compounds; III-V semiconductors; photoconducting switches

Domaines: Electromagnétisme; Electronique

Kian Hua Tan, Sonn Fatt Yoon, Charlotte Tripon-Canseliet, Wan Khai Loke, Satrio Wicaksono, et al.. GaNAsSb material for ultrafast microwave photoconductive switching application. Applied Physics Letters, 2008, 93 (6), pp.063509. ⟨10.1063/1.2971204⟩. ⟨hal-00580735⟩