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An improvement in standard photolithography resolution based on Kirchhoff diffraction studies

Abstract : This paper demonstrates the realization of submicrometric patterns by using standard photolithography (365 nm). Significant improvements in standard photolithography resolution can be achieved with specific conditions of a very thin layer of photoresist (0.13 µm). Usually, standard photolithography has a resolution limit of about 1 µm. Firstly, using Kirchhoff diffraction theory we show that with these new conditions the theoretical resolution limit could be 0.4 µm. Secondly, in the experimental part, the realization of 0.8 µm size patterns is demonstrated.
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https://hal.archives-ouvertes.fr/hal-00353894
Contributor : Sylvain Fève <>
Submitted on : Friday, January 16, 2009 - 5:43:42 PM
Last modification on : Tuesday, January 12, 2021 - 4:42:01 PM

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Azar Maalouf, Michel Gadonna, Dominique Bosc. An improvement in standard photolithography resolution based on Kirchhoff diffraction studies. Journal of Physics D: Applied Physics, IOP Publishing, 2009, Vol.42 (n°1), pp.015106. ⟨10.1088/0022-3727/42/1/015106⟩. ⟨hal-00353894⟩

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